15NA50 |
Part Number | 15NA50 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and g... |
Features |
ymbol Parameter Value STH/STW15NA50 VD S V DG R V GS ID ID ID M( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Unit STH15NA50FI V V V 9.3 5.5 58.4 80 0.64 4000 A A A W W/o C V o o 500 500 ± 30 14.6 9.2 58.4 190 1.52 -65 to 150 150 C C ( •) Pulse width limited by safe operating ar... |
Document |
15NA50 Data Sheet
PDF 272.09KB |
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