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MS3383 |
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| Part Number | MS3383 |
| Manufacturer | Advanced Power Technology |
| Description | The MS3383 is a common base, hermetically sealed silicon NPN microwave power transistor. This device is designed for Class C applications in the 1 - 3 GHz frequency range. Gold metallization and emit... |
| Features |
www.DataSheet4U.com
• • • • • • • GOLD METALIZATION POUT = 1.0 W MINIMUM 3.0 GHz GP = 7.0 dB INFINITE VSWR CAPABLE @ RATED CONDITIONS HERMETIC PACKAGE COMMON BASE CONFIGURATION DESCRIPTION: The MS3383 is a common base, hermetically sealed silicon NPN microwave power transistor. This device is designed for Class C applications in the 1 - 3 GHz frequency range. Gold metallization and emitter ballasting provide long term reliability and superior ruggedness. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol PDISS VCC IC TJ T STG Parameter Power Dissipation* Collector-Supply Voltage* Device Curre... |
| Document |
 MS3383 Data Sheet
PDF 113.13KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MS3302 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS |
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| 2 | MS3303 |
Microsemi |
RF & MICROWAVE TRANSISTORS |
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| 3 | MS3303H |
ETC |
USB to COM |
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| 4 | MS3320 |
ETC |
MS3320 |
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| 5 | MS33537E |
ETC |
Insert Screw |
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| 6 | MS33588 |
Military Standard |
Nuts |
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