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MS3302 |
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| Part Number | MS3302 |
| Manufacturer | Advanced Power Technology |
| Description | The MS3302 is a common base silicon NPN microwave transistor designed for general purpose applications over the 1.0 – 3.0 GHz frequency range. The MS3302 utilizes an emitter ballasted die geometry fo... |
| Features |
• 3.0 GHz • GOLD METALIZATION www.DataSheet4U.com • EMITTER BALLASTED • POUT = 4.5 W MINIMUM • GP = 4.5 dB • ∞ :1 VSWR CAPABILITY @ RATED CONDITIONS • COMMON BASE CONFIGURATION DESCRIPTION: The MS3302 is a common base silicon NPN microwave transistor designed for general purpose applications over the 1.0 – 3.0 GHz frequency range. The MS3302 utilizes an emitter ballasted die geometry for maximum load VSWR capability under rated conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol PDISS VCC IC TJ T STG Parameter Power Dissipation Collector-Supply Voltage Device Current Junction Temper... |
| Document |
 MS3302 Data Sheet
PDF 171.26KB |
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