12N035 |
Part Number | 12N035 |
Manufacturer | BL |
Description | The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automotive and... |
Features |
• • • Critical DC Electrical parameters specified at elevated Temp. Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser Super high density cell design for extremely low RDS(ON) VDSS = 30V RDS (ON) = 0.045 Ω ID = 12A Ordering Information Device 12N035T 12N035S Package TO-220 TO-263 ( D2 ) Temp. 0 to 150°C 0 to 150°C Absolute Maximum Rating Symbol ID Parameter Drain Current -Continues -Pulsed Drain-Source Voltage Gate Source Voltage Total Power Dissipation @ TC =25°C Derate above 25°C Operating and Storage Temperature Range Max 12 36 30 ±... |
Document |
12N035 Data Sheet
PDF 65.67KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 12N06Z |
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