FQP4N90C |
Part Number | FQP4N90C |
Manufacturer | Fairchild Semiconductor |
Description | This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to ... |
Features |
• 4.0 A, 900 V, RDS(on) = 4.2 Ω (Max.) @ VGS = 10 V, ID = 2.0 A • Low Gate Charge (Typ. 17 nC) • Low Crss (Typ. 5.6 pF) • 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100... |
Document |
FQP4N90C Data Sheet
PDF 1.18MB |
Similar Datasheet
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