SPB30N03 |
Part Number | SPB30N03 |
Manufacturer | Infineon (https://www.infineon.com/) Technologies |
Description | SPP 30N03 SIPMOS® Power Transistor Features • N channel • Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 30 V A Enhancement mode RDS(on)... |
Features |
• N channel • Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 30 V A Enhancement mode RDS(on) 0.023 Ω • Avalanche rated • dv/dt rated • 175˚C operating temperature www.DataSheet4U.com Type SPP30N03 SPB30N03 Package Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S P-TO220-3-1 Q67040-S4736-A2 Tube P-TO263-3-2 Q67040-S4736-A3 Tape and Reel Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Continuous drain current Symbol Value 30 30 120 145 7.5 6 kV/µs mJ Unit A ID TC = 25 ˚C, TC = 100 ˚C 1) Pulsed drain ... |
Document |
SPB30N03 Data Sheet
PDF 133.73KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | SPB30N03L |
Infineon Technologies |
SIPMOS Power Transistor | |
2 | SPB30 |
ETC |
Piezo Ceramic Buzzer | |
3 | SPB35N10 |
Infineon Technologies |
SIPMOS Power-Transistor | |
4 | SPB-002 |
SSDI |
10 AMP 20 VOLTS BYPASS DIODE ASSEMBLY | |
5 | SPB-2026Z |
Sirenza Microdevices |
InGaP Amplifier | |
6 | SPB-2026Z |
RFMD |
0.7 GHz to 2.2 GHz 2W InGaP Amplifier |