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IPP091N06NG |
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| Part Number | IPP091N06NG |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | www.DataSheet4U.com IPB091N06N G IPP091N06N G OptiMOS® Power-Transistor Features • Low gate charge for fast switching applications • N-channel enhancement - normal level • 175 °C operating temperat... |
| Features |
• Low gate charge for fast switching applications • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMDversion 60 9.1 80 V mΩ A Type IPP091N06N G IPB091N06N G Package Marking PG-TO220-3-1 091N06N PG-TO263-3-2 091N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating a... |
| Document |
 IPP091N06NG Data Sheet
PDF 481.13KB |
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Desde 2024. D4U Semiconductor.
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