IPU26CNE8NG Infineon Technologies Power-Transistor Datasheet. existencias, precio

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IPU26CNE8NG

Infineon Technologies
IPU26CNE8NG
IPU26CNE8NG IPU26CNE8NG
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Part Number IPU26CNE8NG
Manufacturer Infineon (https://www.infineon.com/) Technologies
Description www.DataSheet4U.com IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • ...
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO252) ID 85 25 35 V mΩ A
• Ideal for high-frequency switching and synchronous rectification Type IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G Package Marking PG-TO263-3 26CNE8N PG-TO252-3 25CNE8N PG-TO262-3 26CNE8N PG-TO220-3 26CNE8N PG-TO251-3 25CNE8N Maximum ratings, at T j=25 °C, unless otherwise...

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