Busque con el número de pieza junto con el fabricante o la descripción
2SB674 |
Click to view a larger image
| Part Number | 2SB674 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | : B673" 2SB674 2SB675I SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. FEATURES • High DC Current Gain : ... |
| Features |
• High DC Current Gain : hFE=2000(Min. ) (VCE=-3V,I C=-3A) • Low Saturation Voltage : Vc E ( sa t)=-1.5V(Max. ) (Ic=-3A) • Complementary to 2SD633, 2SD634 and 2SD635. INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. £to.6±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current 2SB673 2SB674 2SB675 2SB673 2SB674 2SB675 SYMBOL v CBO VcEO VEBO ic IB RATING -100 -80 -60 -100 -80 -60 -5 -7 -0.2 UNIT V V V A A Collector Power Dissipation PC (Tc=25°C) 40 W Junction Temperature T1 150 °C Storage Tempe... |
| Document |
 2SB674 Data Sheet
PDF 119.67KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
|