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ILD03N60 |
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| Part Number | ILD03N60 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | www.DataSheet4U.com ^ ILA03N60, ILP03N60 ILB03N60, ILD03N60 LightMOS Power Transistor C • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated ... |
| Features |
-emitter voltage DC collector current
Pulsed collector current, tp limited by Tjmax, tp < 10 ms Pulsed collector current, tp limited by Tjmax Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax, tp < 10 ms Diode pulsed current, tp limited by Tjmax Avalanche energy, single pulse IC=0.4A, VCE=50V Gate-emitter voltage Reverse diode dv/dt IC ≤ 3A, VCE ≤ 450V, Tjmax ≤ 150°C Power dissipation (TC = 25°C) Operating junction and storage temperature Soldering temperature for 10 s (according to JEDEC J-STA-020A)
4 2.5
mJ V V/ns 27 W °C
-55...+150 D-Pak Others 255 220... |
| Document |
 ILD03N60 Data Sheet
PDF 370.85KB |
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