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W18NK80Z |
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| Part Number | W18NK80Z |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken... |
| Features |
Type STW18NK80Z
■ ■ ■ ■ ■ VDSS 800V RDS(on) <0.38Ω ID 19A pW 350W Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility TO-247 Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary ... |
| Document |
 W18NK80Z Data Sheet
PDF 306.33KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | W18NB40 |
ST MICROELECTRONICS |
N-Channel MOSFET |
|
| 2 | W180 |
Cypress Semiconductor |
Peak Reducing EMI Solution |
|
| 3 | W181 |
Cypress Semiconductor |
Peak Reducing EMI Solution |
|
| 4 | W182 |
Cypress Semiconductor |
Full Feature Peak Reducing EMI Solution |
|
| 5 | W182-5 |
Cypress Semiconductor |
Full Feature Peak Reducing EMI Solution |
|
| 6 | W183 |
Cypress Semiconductor |
Full Feature Peak Reducing EMI Solution |
|
Desde 2024. D4U Semiconductor.
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