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LP1500SOT89 |
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| Part Number | LP1500SOT89 |
| Manufacturer | Filtronic Compound Semiconductors |
| Description | AND APPLICATIONS The LP1500SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 1500... |
| Features |
♦ 27.5 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 17 dB Power Gain at 1.8 GHz ♦ 1.0 dB Noise Figure ♦ 44 dBm Output IP3 at 1.8 GHz ♦ 50% Power-Added Efficiency
• DESCRIPTION AND APPLICATIONS The LP1500SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 1500 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimi... |
| Document |
 LP1500SOT89 Data Sheet
PDF 44.12KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | LP1500SOT223 |
Filtronic Compound Semiconductors |
Low Noise/ High Linearity Packaged PHEMT |
|
| 2 | LP1500SOT2231 |
Filtronic Compound Semiconductors |
Low Noise/ High Linearity Packaged PHEMT |
|
| 3 | LP1500SOT2232 |
Filtronic Compound Semiconductors |
Low Noise/ High Linearity Packaged PHEMT |
|
| 4 | LP1500SOT2233 |
Filtronic Compound Semiconductors |
Low Noise/ High Linearity Packaged PHEMT |
|
| 5 | LP1500 |
Filtronic Compound Semiconductors |
1W POWER PHEMT |
|
| 6 | LP1500P100 |
Filtronic Compound Semiconductors |
PACKAGED 1W POWER PHEMT |
|
Desde 2024. D4U Semiconductor.
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