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LP1500SOT2232 |
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| Part Number | LP1500SOT2232 |
| Manufacturer | Filtronic Compound Semiconductors |
| Description | AND APPLICATIONS The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam ... |
| Features |
LP1500SOT223
Low Noise, High Linearity Packaged PHEMT
• • • • • +27 dBm Typical Power at 1800 MHz 15 dB Typical Power Gain at 1800 MHz 1.0 dB Typical Noise Figure +42 dBm Typical Intercept Point Color-coded by IDSS range GATE SOURCE SOURCE DRAIN (TOP VIEW) DESCRIPTION AND APPLICATIONS The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-sou... |
| Document |
 LP1500SOT2232 Data Sheet
PDF 69.84KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | LP1500SOT223 |
Filtronic Compound Semiconductors |
Low Noise/ High Linearity Packaged PHEMT |
|
| 2 | LP1500SOT2231 |
Filtronic Compound Semiconductors |
Low Noise/ High Linearity Packaged PHEMT |
|
| 3 | LP1500SOT2233 |
Filtronic Compound Semiconductors |
Low Noise/ High Linearity Packaged PHEMT |
|
| 4 | LP1500SOT89 |
Filtronic Compound Semiconductors |
LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT |
|
| 5 | LP1500 |
Filtronic Compound Semiconductors |
1W POWER PHEMT |
|
| 6 | LP1500P100 |
Filtronic Compound Semiconductors |
PACKAGED 1W POWER PHEMT |
|
Desde 2024. D4U Semiconductor.
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