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FPD3000SOT89 |
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| Part Number | FPD3000SOT89 |
| Manufacturer | Filtronic Compound Semiconductors |
| Description | AND APPLICATIONS The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 x 3000 µm Schottky barrier Gate, defined by hig... |
| Features |
ture systems.
• ELECTRICAL SPECIFICATIONS AT 22°C Parameter Power at 1dB Gain Compression Small-Signal Gain Power-Added Efficiency Noise Figure Output Third-Order Intercept Point (from 15 to 5 dB below P1dB) Saturated Drain-Source Current Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Gate-Drain Breakdown Voltage IDSS IMAX GM IGSO |VP| |VBDGS| |VBDGD| Symbol P1dB SSG PAE NF IP3 Test Conditions VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS; POUT = P1dB VDS = 5 V; IDS = 50% IDSS VDS = 5 V... |
| Document |
 FPD3000SOT89 Data Sheet
PDF 422.75KB |
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Desde 2024. D4U Semiconductor.
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