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QL65D7SB |
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| Part Number | QL65D7SB |
| Manufacturer | Roithner Lasertechnik |
| Description | www.DataSheet4U.com QL65D7SB InGaAlP Laser Diode 2003 Rev 0 ♦OVERVIEW QL65D7SB is a MOCVD grown 650 nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a ... |
| Features |
- Visible Light Output: λp = 650 nm - Optical Power Output: 5 mW CW - Package Type : TO-18 (5.6 mmφ) - Built-in Photo Diode for Monitoring Laser Diode
♦ELECTRICAL CONNECTION
Bottom View
Pin Configuration
www.DataSheet4U.com
♦ABSOLUTE MAXIMUM RATING at Tc=25°C
Items
Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Storage Temperature
Symbols P V V Topr Tstg
Values 5 2 30 −10 ~ +70 −40 ~ +85
Unit mW V V °C °C
♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C
Items
Optical Output Power Threshold Current Operating Current Operating Voltag... |
| Document |
 QL65D7SB Data Sheet
PDF 78.40KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | QL65D5S-A |
QSI |
LASER DIODE |
|
| 2 | QL65D5S-A-L1 |
QSI |
LASER DIODE |
|
| 3 | QL65D5S-B |
QSI |
LASER DIODE |
|
| 4 | QL65D5S-B-L1 |
QSI |
LASER DIODE |
|
| 5 | QL65D5S-C |
QSI |
LASER DIODE |
|
| 6 | QL65D5S-C-L1 |
QSI |
LASER DIODE |
|
Desde 2024. D4U Semiconductor.
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