MS1642P Advanced Power Technology RF & MICROWAVE TRANSISTORS Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

MS1642P

Advanced Power Technology
MS1642P
MS1642P MS1642P
zoom Click to view a larger image
Part Number MS1642P
Manufacturer Advanced Power Technology
Description The MS1642 is a gold metallized silicon NPN transistor designed for general purpose amplifier applications in the VHF and UHF frequency bands. Diffused emitter ballast resistors and computer controll...
Features





• 400 MHz GOLD METALLIZATION POUT = 10 W MINIMUM GP = 12 dB MINIMUM INFINITE VSWR CAPABILITY COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1642 is a gold metallized silicon NPN transistor designed for general purpose amplifier applications in the VHF and UHF frequency bands. Diffused emitter ballast resistors and computer controlled wirebonding techniques ensure maximum device reliability and consistency. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol PDISS IC(max) T STG VCBO VCEO VEBO Parameter Power Dissipation* Device Current* Storage Temperature Collector
  – Base Voltage Col...

Document Datasheet MS1642P Data Sheet
PDF 103.41KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 MS1645
Microsemi Corporation
(MS1635 - MS1645) 16 AMP SCHOTTKY BARRIER RECTIFIER Datasheet
2 MS1649
Advanced Power Technology
RF & MICROWAVE TRANSISTORS Datasheet
3 MS16
Pan Jit International
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Datasheet
4 MS16100
Microsemi Corporation
(MS1680 - MS16100) 16 AMP SCHOTTKY RECTIFIER Datasheet
5 MS16180
EIC
(MS16180 / MS16200) Schottky Barrier Rectifiers Datasheet
6 MS16200
EIC
(MS16180 / MS16200) Schottky Barrier Rectifiers Datasheet
More datasheet from Advanced Power Technology
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad