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CM1200HB-66H |
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| Part Number | CM1200HB-66H |
| Manufacturer | Mitsubishi Electric |
| Description | www.DataSheet4U.com MITSUBISHI HVIGBT MODULES CM1200HB-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HB-66H q IC ...... |
| Features |
MAXIMUM RATINGS (Tj = 25°C)
Symbol VCES VGES IC ICM IE (Note 2) IEM(Note 2) PC (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass VGE = 0V VCE = 0V DC, TC = 100°C Pulse Pulse TC = 25°C, IGBT part Conditions Ratings 3300 ±20 1200 2400 1200 2400 15600 –40 ~ +150 –40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 2.2 Unit V V A A A A W °C °C V N ·m N ·m N ·m kg (Note 1) (Note 1) — — Charged part to base plate, rms, sinusoidal,... |
| Document |
 CM1200HB-66H Data Sheet
PDF 79.46KB |
Similar Datasheet
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| 1 | CM1200HB-66H |
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| 2 | CM1200HB-50H |
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Desde 2024. D4U Semiconductor.
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