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ECH8302 |
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| Part Number | ECH8302 |
| Manufacturer | Sanyo Semicon Device |
| Description | www.DataSheet4U.com Ordering number : ENN8247 ECH8302 P-Channel Silicon MOSFET ECH8302 Features • • General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Specifications Abs... |
| Features |
• • General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings --30 ±20 --7 --40 1.6 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-t... |
| Document |
 ECH8302 Data Sheet
PDF 68.83KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | ECH8304 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|
| 2 | ECH8305 |
Sanyo Semicon Device |
General-Purpose Switching Device |
|
| 3 | ECH8306 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|
| 4 | ECH8308 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|
| 5 | ECH8308 |
ON Semiconductor |
P-Channel Power MOSFET |
|
| 6 | ECH8309 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|
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