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NP36P06KDG |
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| Part Number | NP36P06KDG |
| Manufacturer | NEC |
| Description |
The NP36P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. |
| Features |
• Super low on-state resistance RDS(on)1 = 29.5 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 37.5 mΩ MAX. (VGS = −4.5 V, ID = −18 A) • Low input capacitance Ciss = 3100 pF TYP. (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg −60 m20 m36 m108 56 1.8 175 −55 to +175 23 54 V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche ... |
| Document |
 NP36P06KDG Data Sheet
PDF 207.18KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NP36P06KDG |
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P-channel Power MOSFET |
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| 2 | NP36P06SLG |
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P-channel Power MOSFET |
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| 3 | NP36P06SLG |
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N-Channel Power MOSFET |
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| 4 | NP36P04KDG |
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| 5 | NP36P04KDG |
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| 6 | NP36P04SDG |
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P-channel Power MOSFET |
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Desde 2024. D4U Semiconductor.
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