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WFP4N60 |
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| Part Number | WFP4N60 |
| Manufacturer | Wisdom technologies |
| Description | This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche ... |
| Features |
■ ■ ■ ■ ■ RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2. Drain ● 1. Gate { ▲ ● ● { 3. Source General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp bal... |
| Document |
 WFP4N60 Data Sheet
PDF 771.76KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | WFP10N60 |
Wisdom technologies |
N-Channel MOSFET |
|
| 2 | WFP10N60 |
WINSEMI SEMICONDUCTOR |
Silicon N-Channel MOSFET |
|
| 3 | WFP10N65 |
WINSEMI SEMICONDUCTOR |
Silicon N-Channel MOSFET |
|
| 4 | WFP12N60 |
Wisdom technologies |
N-Channel MOSFET |
|
| 5 | WFP12N60 |
WINSEMI SEMICONDUCTOR |
Silicon N-Channel MOSFET |
|
| 6 | WFP12N65 |
WINSEMI SEMICONDUCTOR |
Silicon N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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