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STN1NB80 |
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| Part Number | STN1NB80 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with... |
| Features |
G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor dv/dt( 1 ) Ts tg Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
o o
Value 800 800 ± 30 0.2 0.12 0.8 2.9 0.02 4 -65 to 150 150
( 1) ISD ≤ 0.2 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it V V V A A A W W /o C V/ns
o o
C C
( •) Pulse width limited by safe operating area November 1999 STN1NB80 THERMAL DATA R thj -case Rthj -amb R thc-sink Tl Thermal Resistance Junc... |
| Document |
 STN1NB80 Data Sheet
PDF 109.94KB |
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