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STN1N20 |
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| Part Number | STN1N20 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | leteThis device is an N-channel Power MOSFET odeveloped using the latest high voltage MESH sOVERLAY™ process. The new patented STrip blayout coupled with the company’s proprietary Oedge termination st... |
| Features |
Type
VDSS RDS(on) max
ID
STN1N20
200 V
< 1.5 Ω
t(s) ■ 100% avalanche tested 1A ucApplication rod ■ Switching applications PDescription leteThis device is an N-channel Power MOSFET odeveloped using the latest high voltage MESH sOVERLAY™ process. The new patented STrip blayout coupled with the company’s proprietary Oedge termination structure, makes it suitable in ) -converters for lighting applications. 4 3 2 1 SOT-223 Figure 1. Internal schematic diagram $ roduct(s ' Obsolete P 3 !-V Table 1. Device summary Order code STN1N20 Marking N1N20 Package SOT-223 Packag... |
| Document |
 STN1N20 Data Sheet
PDF 510.87KB |
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