IRLZ44NS |
Part Number | IRLZ44NS |
Manufacturer | International Rectifier |
Description | l HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.022Ω G ID = 47A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistan... |
Features |
ection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRLZ44NL) is available for lowprofile applications.
D 2 P ak
T O -26 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt... |
Document |
IRLZ44NS Data Sheet
PDF 186.75KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRLZ44N |
International Rectifier |
Power MOSFET | |
2 | IRLZ44N |
INCHANGE |
N-Channel MOSFET | |
3 | IRLZ44NL |
International Rectifier |
Power MOSFET | |
4 | IRLZ44NLPBF |
International Rectifier |
Power MOSFET | |
5 | IRLZ44NPBF |
International Rectifier |
POWER MOSFET | |
6 | IRLZ44NS |
INCHANGE |
N-Channel MOSFET |