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BLF0810-90 |
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| Part Number | BLF0810-90 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | BLF0810-90; BLF0810S-90 APPLICATIONS • RF power amplifier for GSM, EDGE and CDMA base stations and multicarrier operations in the 800 to 1000 MHz frequency range. DESCRIPTION 90 W LDMOS power transis... |
| Features |
• Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 560 mA. Adjacent channel bandwidth is 30 kHz, adjacent channel at ± 750 kHz: – Output power = 15 W (AV) – Gain = 16 dB – Efficiency = 27% – ACPR = −46 dBc at 750 kHz and BW = 30 kHz • 70 W CW performance • Easy power control • Excellent ruggedness • High power gain • Excellent thermal stability • Designed for broadband operation (800 to 1000 MHz) • Internally matched for ease of use. PINNING - SOT502A PIN 1 2 3 drain gate source; connected to flange DESCRIPTION BLF0810-90; BLF0810S-90 APPLICATIONS • R... |
| Document |
 BLF0810-90 Data Sheet
PDF 151.27KB |
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