IRF6215PBF |
Part Number | IRF6215PBF |
Manufacturer | International Rectifier |
Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe... |
Features |
C = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
Max.
-13 -9.0 -44 110 0.71 ± 20 310 -6.6 11 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf •in (1.1N •m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθCS ... |
Document |
IRF6215PBF Data Sheet
PDF 200.04KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRF6215 |
International Rectifier |
HEXFET Power MOSFET | |
2 | IRF6215L |
International Rectifier |
(IRF6215L/S) HEXFET Power MOSFET | |
3 | IRF6215LPBF |
International Rectifier |
Power MOSFET | |
4 | IRF6215S |
International Rectifier |
(IRF6215L/S) HEXFET Power MOSFET | |
5 | IRF6215SPBF |
International Rectifier |
Power MOSFET | |
6 | IRF621 |
Inchange Semiconductor |
N-Channel Mosfet Transistor |