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Features
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racteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE1 hFE2 fT Cob 380µs, Duty Cycle 2%
Min 40 30 5 30 100 -
Typ 0.3 1 90 45
Max 1 1 0.5 2 500 -
Unit V V V µA µA V V MHz pF
Test Conditions IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=30V, IE=0 VEB=3V, IC=0 IC=2A, IB=0.2A IC=2A, IB=0.2A IC=20mA, VCE=2V IC=1A, VCE=2V IC=0.1A, VCE=5V, f=100MHz VCB=10V, f=1MHz
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter C...
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I882 Data Sheet
Desde 2024. D4U Semiconductor.
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