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LP7512P70 |
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| Part Number | LP7512P70 |
| Manufacturer | Filtronic Compound Semiconductors |
| Description | AND APPLICATIONS The LP7512P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam dir... |
| Features |
♦ 0.7 dB Noise Figure at 12 GHz ♦ 12 dB Associated Gain at 12 GHz ♦ 0.4 dB Noise Figure at 2 GHz ♦ 18 dB Associated Gain at 2 GHz ♦ Low DC Power Consumption: 30mW
LP7512P70
• DESCRIPTION AND APPLICATIONS The LP7512P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimi... |
| Document |
 LP7512P70 Data Sheet
PDF 59.88KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | LP7512 |
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ULTRA LOW NOISE PHEMT |
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| 2 | LP7510 |
ETC |
PC Power Supply Supervisors |
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| 3 | LP75103122F |
EEMB |
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| 4 | LP750 |
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| 5 | LP750P100 |
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| 6 | LP750SOT89 |
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|
Desde 2024. D4U Semiconductor.
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