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LP702 |
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| Part Number | LP702 |
| Manufacturer | Polyfet RF Devices |
| Description | Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver an... |
| Features |
low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 70.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Device Dissipation 150 Watts Junction to Case Thermal Resistance o 1.00 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V
9.0 A
RF CHARACTERISTICS (
SYMBOL ... |
| Document |
 LP702 Data Sheet
PDF 35.96KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | LP701 |
Polyfet RF Devices |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
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| 2 | LP7100B |
Silvan Chip |
Tone siren |
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| 3 | LP721 |
Polyfet RF Devices |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
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| 4 | LP722 |
Polyfet RF Devices |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
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| 5 | LP750 |
Filtronic Compound Semiconductors |
0.5 W POWER PHEMT |
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| 6 | LP750P100 |
Filtronic Compound Semiconductors |
PACKAGED 0.5 WATT POWER PHEMT |
|
Desde 2024. D4U Semiconductor.
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