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RD06HHF1 |
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| Part Number | RD06HHF1 |
| Manufacturer | Mitsubishi Electric |
| Description | RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. OUTLINE DRAWING 3.2+/-0.4 4.8MAX 9+/-0.4 •High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz ... |
| Features |
2
For output stage of high power amplifiers in HF band mobile radio sets.
12.3MIN
APPLICATION
1.2+/-0.4 0.8+0.10/-0.15
1 2 3
0.5+0.10/-0.15 2.5 2.5 3.1+/-0.6 4.5+/-0.5
5deg
PIN 1.Gate 2.Source 3.Drain UNIT:mm
9.5MAX
ABSOLUTE MAXIMUM RATINGS
www.DataSheet4U.com
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω junction to case RATINGS UNIT 50 V +/- 20 V 27... |
| Document |
 RD06HHF1 Data Sheet
PDF 571.80KB |
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