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RD02MUS2 |
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| Part Number | RD02MUS2 |
| Manufacturer | Mitsubishi Electric |
| Description | RD02MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications. This device have an interal monolithic zener diode from gate to source for ESD protection. ... |
| Features |
•High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz,520MHz •High Efficiency:65%typ.(175MHz) •High Efficiency:65%typ.(520MHz) •Integrated gate protection diode 3 (0.25) INDEX MARK (Gate) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm APPLICATION For output stage of high power amplifiers In VHF/UHF band mobile radio sets. RoHS COMPLIANT www.DataSheet4U.com RD02MUS2-101,T112 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking. This product include the lead in high melting tempera... |
| Document |
 RD02MUS2 Data Sheet
PDF 279.97KB |
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