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RD00HVS1 |
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| Part Number | RD00HVS1 |
| Manufacturer | Mitsubishi Electric |
| Description | RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. TYPE NAME 0.8 MIN 2.5+/-0.1 OUTLINE DRAWING 1.5+/-0.1 FEATURES High power gain Pout>0.5W, Gp>20dB ... |
| Features |
High power gain Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz
1
2
1.5+/-0.1
3
1.5+/-0.1
0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm
APPLICATION
For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 0.1 MAX
RoHS COMPLIANT
RD00HVS1-101,T113 is a RoHS compliant products. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
... |
| Document |
 RD00HVS1 Data Sheet
PDF 176.33KB |
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