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IRLI630G |
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| Part Number | IRLI630G |
| Manufacturer | International Rectifier |
| Description | Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 Fu... |
| Features |
ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 5.0V Continuous Drain Current, VGS @ 5.0V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
6.2 3.9 25 35 0.28 ±10 125 6.2 3.5 5.0 -55 to + 150 300 (1.6mm from case) 10 lbf •in (1.1N •m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance ... |
| Document |
 IRLI630G Data Sheet
PDF 264.00KB |
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Desde 2024. D4U Semiconductor.
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