Busque con el número de pieza junto con el fabricante o la descripción
IRFU3303PBF |
Click to view a larger image
| Part Number | IRFU3303PBF |
| Manufacturer | International Rectifier |
| Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe... |
| Features |
ute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
33
21
120 57 0.45 ± 20 95 18 5.7 5.0 -55 to + 150 300 (1.6mm from case )
Units
A W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Par... |
| Document |
 IRFU3303PBF Data Sheet
PDF 273.27KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFU3303 |
International Rectifier |
HEXFET Power MOSFET |
|
| 2 | IRFU330A |
Samsung |
Power MOSFET |
|
| 3 | IRFU330B |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|
| 4 | IRFU310 |
International Rectifier |
Power MOSFET |
|
| 5 | IRFU310 |
Vishay Siliconix |
Power MOSFET |
|
| 6 | IRFU310 |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
|