Busque con el número de pieza junto con el fabricante o la descripción
BA01207 |
Click to view a larger image
| Part Number | BA01207 |
| Manufacturer | Mitsubishi Electric |
| Description | The BA01207 GaAs RF amplifier designed for J-cdmaOne hand-held phone. Outline Drawing unit : milimeter 1 8 7 6 4 4.5 5 1.5max. 1:Pin 2:Vc1 3:Vc2 4:GND 5:Pout 6:Vcb 7:Vref 8:GND FEATURES Low voltage ... |
| Features |
Low voltage Vc =3.5V High power Po=27.5dBm High gain Gp=27.5dB@Po=27.5dBm 2stage amplifier Internal input* and output matching
*Use DC block for input port
2 3
1.45
APPLICATION
N-CDMA (Spreading chip rate is 1.2288Mcps, modulation is OQPSK) hand set.
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Symbol Vcc Pin Tc(op) Tstg Parameter Supply voltage of HPA Input power Operating case temp. Storage temp. Condition ZG=ZL=50Ω Ratings* 6 7 -20 ∼ +85 -30 ∼ +125 Unit V dBm °C °C
*Note : Each maximum rating is guaranteed independently .
www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS(Ta=25°C , ZG=ZL=50Ω)
Limit... |
| Document |
 BA01207 Data Sheet
PDF 56.09KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BA01202 |
Mitsubishi Electric Semiconductor |
GaAs HBT HYBRID IC(N-CDMA hand set) |
|
| 2 | BA01203 |
Mitsubishi Electric Semiconductor |
GaAs HBT HYBRID IC(CDMA/AMPS handheld-phone) |
|
| 3 | BA01232 |
Mitsubishi Electric Semiconductor |
GaAs RF amplifier designed |
|
| 4 | BA01303 |
Mitsubishi Electric |
Triple Band(EGSM900/DCS1800/PCS1900) InGaP HBT Front-end module |
|
| 5 | BA000LBSG |
Rohm |
Super-mini package regulator IC |
|
| 6 | BA00BC0WF |
Rohm |
LDO Regulator With Shutdown Circuit |
|
Desde 2024. D4U Semiconductor.
|