IRFB13N50APBF |
Part Number | IRFB13N50APBF |
Manufacturer | International Rectifier |
Description | SMPS MOSFET PD - 95122 IRFB13N50APbF HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Lead-Free VDSS 500V RDS(on) ... |
Features |
EAS IAR EAR
Parameter
Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
– – – – – – – – – Max. 560 14 25 Units mJ A mJ Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. – – – 0.50 – – – Max. 0.50 – – – 62 Units °C/W www.irf.com 1 3/18/04 IRFB13N50APbF Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Volt... |
Document |
IRFB13N50APBF Data Sheet
PDF 202.85KB |
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