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NZT605 |
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| Part Number | NZT605 |
| Manufacturer | Fairchild Semiconductor |
| Description | NZT605 NPN Darlington Transistor January 2007 NZT605 NPN Darlington Transistor • This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown ... |
| Features |
V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICES IEBO hFE
TC = 25°C unless otherwise noted
Parameter
Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cut-off Current
Conditions
IC = 10mA, IB = 0 IC = 100µA, IE = 0 IE = 100µA, IC = 0 VCB = 120V, IE = 0 VCE = 120V, IE = 0 VEB = 8.0V, IC = 0 VCE = 5.0V, IC = 50mA VCE = 5.0V, IC = 500mA VCE = 5.0V, IC = 1.0A VCE = 5.0V, IC = 1.5A VCE = 5.0V, IC = 2.0A IC = 250mA, IB = 0.25mA IC = 1.0A, IB = 1.0mA IC = 1.0A, IB = 1.0mA IC = 1.0A, VCE = 5.0V IC = 10... |
| Document |
 NZT605 Data Sheet
PDF 90.95KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NZT651 |
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| 2 | NZT660 |
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| 3 | NZT660A |
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| 4 | NZT6714 |
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| 5 | NZT6715 |
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| 6 | NZT6717 |
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Desde 2024. D4U Semiconductor.
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