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HYB39S256400CTL |
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| Part Number | HYB39S256400CTL |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | HYB 39S256400CT-7.5 HYB 39S256400CT-8 HYB 39S256800CT-7.5 HYB 39S256800CT-8 HYB 39S256160CT-7.5 HYB 39S256160CT-8 HYB39S256xx0CTL PC133-333-520 PC100-222-620 PC133-333-520 PC100-222-620 PC133-333-52... |
| Features |
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The HYB39S256400/800/160CT(L) are four bank Synchronous DRAM’s organized as 4 banks x 16MBit x4, 4 banks x 8MBit x8 and 4 banks x 4Mbit x16 respectively. These synchronous devices achieve high speed data transfer rates for CAS-latencies by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock. The chip is fabricated with INFINEON’s advanced 0.17 µm 256MBit DRAM process technology. The device is designed to comply with all industry standards set for synchronous DRAM products, both electrically an... |
| Document |
 HYB39S256400CTL Data Sheet
PDF 509.95KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | HYB39S256400CT |
Infineon Technologies |
(HYB39S256xxxCT) 256 MBit Synchronous DRAM |
|
| 2 | HYB39S256400 |
Siemens Semiconductor |
(HYB39S256xxx) 256 MBit Synchronous DRAM |
|
| 3 | HYB39S256400DC |
Infineon Technologies |
(HYB39S256xxxD) 256 MBit Synchronous DRAM |
|
| 4 | HYB39S256400DCL |
Infineon Technologies |
(HYB39S256xxxD) 256 MBit Synchronous DRAM |
|
| 5 | HYB39S256400DT |
Infineon Technologies |
(HYB39S256xxxD) 256 MBit Synchronous DRAM |
|
| 6 | HYB39S256400DTL |
Infineon Technologies |
(HYB39S256xxxD) 256 MBit Synchronous DRAM |
|
Desde 2024. D4U Semiconductor.
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