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IRLMS6802PBF |
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| Part Number | IRLMS6802PBF |
| Manufacturer | International Rectifier |
| Description | These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremel... |
| Features |
Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-20 -5.6 -4.5 -45 2.0 1.3 0.016 31 ± 12 -55 to + 150
Units
V A W W/°C mJ V °C
Thermal Resistance
Parameter
RθJA Maximum Junction-to-Ambient
Max.
62.5
Units
°C/W
www.irf.com
1
1/18/05
IRLMS6802PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
Parameter Drain-to-Sourc... |
| Document |
 IRLMS6802PBF Data Sheet
PDF 175.17KB |
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Desde 2024. D4U Semiconductor.
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