Busque con el número de pieza junto con el fabricante o la descripción
IRGIB7B60KD |
Click to view a larger image
| Part Number | IRGIB7B60KD |
| Manufacturer | International Rectifier |
| Description | PD - 94620B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positi... |
| Features |
• • • • • Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. IRGIB7B60KD C VCES = 600V IC = 8.0A, TC=100°C G E tsc > 10µs, TJ=150°C n-channel Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. VCE(on) typ. = 1.8V TO-220AB FullPak Absolute Maximum Ratings Parameter www.DataSheet4U.com Max. 600 12 8.0 Units V A VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = ... |
| Document |
 IRGIB7B60KD Data Sheet
PDF 461.51KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRGIB7B60KDPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 2 | IRGIB10B60KD1 |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 3 | IRGIB10B60KD1P |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 4 | IRGIB10B60KD1PBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 5 | IRGIB15B60KD1 |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 6 | IRGIB15B60KD1P |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|