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IRGIB6B60KD |
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| Part Number | IRGIB6B60KD |
| Manufacturer | International Rectifier |
| Description | PD-94427D IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. ... |
| Features |
• Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. G E C VCES = 600V IC = 6.0A, TC=90°C tsc > 10µs, TJ=175°C n-channel VCE(on) typ. = 1.8V Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. Absolute Maximum Ratings www.DataSheet4U.com TO-220 Full-Pak Max. 600 11 7.0 A 22 22 9.0 6.0 18 2500 ±20 38 19 -55 to +175 °C 300 (0.063 in. (1.6mm) ... |
| Document |
 IRGIB6B60KD Data Sheet
PDF 299.48KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRGIB6B60KDPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 2 | IRGIB10B60KD1 |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 3 | IRGIB10B60KD1P |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 4 | IRGIB10B60KD1PBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 5 | IRGIB15B60KD1 |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 6 | IRGIB15B60KD1P |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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