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IRFU1010ZPBF |
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| Part Number | IRFU1010ZPBF |
| Manufacturer | International Rectifier |
| Description | Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of t... |
| Features |
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IRFR1010ZPbF IRFU1010ZPbF
HEXFET® Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
VDSS = 55V RDS(on) = 7.5mΩ
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make ... |
| Document |
 IRFU1010ZPBF Data Sheet
PDF 380.09KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFU1010Z |
International Rectifier |
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| 2 | IRFU1010Z |
INCHANGE |
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| 3 | IRFU1018E |
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| 4 | IRFU1018EPbF |
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| 5 | IRFU110 |
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| 6 | IRFU110 |
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Desde 2024. D4U Semiconductor.
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