AS4SD4M16 |
Part Number | AS4SD4M16 |
Manufacturer | Austin Semiconductor |
Description | The 64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 67,108,864 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered o... |
Features |
• • • • • • • • • • • • • www.DataSheet4U.com AS4SD4M16 PIN ASSIGNMENT (Top View) 54-Pin TSOP Extended Testing Over -55°C to +125° C and Industrial Temp -40°C to 85° C WRITE Recovery ( tWR/ tDPL) tWR = 2 CLK Fully synchronous; all signals registered on positive edge of system clock Internal pipelined operation; column address can be changed every clock cycle Internal banks for hiding row access/precharge Programmable burst lengths: 1, 2, 4, 8 or full page Auto Precharge and Auto Refresh Modes Self Refresh Mode (Industrial, -40°C to 85° C only) 4,096-cycle refresh LVTTL-compatible inputs and ... |
Document |
AS4SD4M16 Data Sheet
PDF 772.27KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | AS4SD16M16 |
Micross |
256 MB: 16 Meg x 16 SDRAM | |
2 | AS4SD16M16 |
Austin Semiconductor |
16 Meg x 16 SDRAM Synchronous DRAM Memory | |
3 | AS4SD2M32 |
Austin Semiconductor |
512K x 32 x 4 Banks (64-Mb) Synchronous SDRAM | |
4 | AS4SD32M16 |
Austin Semiconductor |
512Mb: 32 Meg x 16 SDRAM | |
5 | AS4SD32M16 |
Micross |
512Mb: 32 Meg x 16 SDRAM | |
6 | AS4SD8M16 |
Micross |
128 Mb: 8 Meg x 16 SDRAM |