AS4SD16M16 Austin Semiconductor Memory, Hoja de datos, Ficha técnica, Distribuidor, Inventario y Mejor Precio

AS4SD16M16

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Part Number	AS4SD16M16
Manufacturer	Austin Semiconductor
Description	The 256MB SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered...
Features	• Full Military temp (-55°C to 125°C) processing available • Configuration: 16 Meg x 16 (4 Meg x 16 x 4 banks) • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8 or full page • Auto Precharge, includes CONCURRENT AUTO PRECHARGE and Auto Refresh Modes • Self Refresh Mode (IT) • 64ms, 8,192-cycle refresh (IT) • <24ms 8,192 cycle recfresh (XT) • WRITE Recovery (tWR = “2 CLK”) • LVTTL-compatible inputs an...
Document	AS4SD16M16 Data Sheet PDF 1.07MB

No.	Parte #	Fabricante	Descripción
1	AS4SD16M16	Micross	256 MB: 16 Meg x 16 SDRAM
2	AS4SD2M32	Austin Semiconductor	512K x 32 x 4 Banks (64-Mb) Synchronous SDRAM
3	AS4SD32M16	Austin Semiconductor	512Mb: 32 Meg x 16 SDRAM
4	AS4SD32M16	Micross	512Mb: 32 Meg x 16 SDRAM
5	AS4SD4M16	Austin Semiconductor	4 Meg x 16 SDRAM Synchronous DRAM Memory
6	AS4SD8M16	Micross	128 Mb: 8 Meg x 16 SDRAM