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AO4806 |
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| Part Number | AO4806 |
| Manufacturer | Alpha & Omega Semiconductors |
| Description | The AO4806 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is sui... |
| Features |
cteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s Steady-State Steady-State
Symbol RqJA RqJL
Maximum 20 ±12 9.4 7.5 40 2 1.28
-55 to 150
Typ 45 72 34
S1
Max 62.5 110 40
D2
S2
Units V V A
W °C
Units °C/W °C/W °C/W
Rev 4.1: March 2024
www.aosmd.com
Page 1 of 4
AO4806
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250mA, VGS=0V
20
IDSS
Zero Gate Voltage Drain Current
VDS=16V, VGS=0V
TJ=55°C
IGSS
Gate-Source... |
| Document |
 AO4806 Data Sheet
PDF 364.34KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AO4800 |
Alpha & Omega Semiconductors |
30V Dual N-Channel MOSFET |
|
| 2 | AO4800B |
Alpha & Omega Semiconductors |
30V Dual N-Channel MOSFET |
|
| 3 | AO4800BL |
Alpha & Omega Semiconductors |
Dual N-Channel MOSFET |
|
| 4 | AO4801 |
Alpha & Omega Semiconductors |
Dual P-Channel MOSFET |
|
| 5 | AO4801A |
Alpha & Omega Semiconductors |
Dual P-Channel MOSFET |
|
| 6 | AO4802 |
Alpha & Omega Semiconductors |
Dual N-Channel MOSFET |
|
| 7 | AO4802L |
Alpha & Omega Semiconductors |
Dual N-Channel MOSFET |
|
| 8 | AO4803 |
Alpha & Omega Semiconductors |
Dual P-Channel MOSFET |
|
| 9 | AO4803A |
Alpha & Omega Semiconductors |
30V Dual P-Channel MOSFET |
|
| 10 | AO4805 |
Alpha & Omega Semiconductors |
30V Dual P-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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