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STP30NE06FP |
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| Part Number | STP30NE06FP |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows ex... |
| Features |
NTERNAL SCHEMATIC DIAGRAM
Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating Factor Insulation W ithstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
o
Value STP30NE06 STP30NE06FP 60 60 ± 20 30 21 120 80 0.53 7 -65 to 175 175
( 1) ISD ≤ 30 A, di/dt ≤300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it V V V 17 12 68 30 0.2 2000 A A A W W /o C V V/... |
| Document |
 STP30NE06FP Data Sheet
PDF 70.93KB |
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Desde 2024. D4U Semiconductor.
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