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IRLU2905PBF |
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| Part Number | IRLU2905PBF |
| Manufacturer | International Rectifier |
| Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switchi... |
| Features |
aximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
42
30 160 110 0.71 ± 16 210 25 11 5.0 -55 to + 175 300 (1.6mm from case )
Units
A W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Paramet... |
| Document |
 IRLU2905PBF Data Sheet
PDF 313.69KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRLU2905 |
International Rectifier |
POWER MOSFET |
|
| 2 | IRLU2905Z |
International Rectifier |
POWER MOSFET |
|
| 3 | IRLU2905Z |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IRLU2905ZPBF |
International Rectifier |
POWER MOSFET |
|
| 5 | IRLU2908 |
International Rectifier |
POWER MOSFET |
|
| 6 | IRLU2908 |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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