IRLI3103 |
Part Number | IRLI3103 |
Manufacturer | International Rectifier |
Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe... |
Features |
ew fixing.
IRLI3103
HEXFET ® Power MOSFET VDSS = 30V RDS(on) = 0.014 Ω ID = 38A
Absolute Maximum Ratings
Parameter
ID @ T C = 25°C ID @ T C = 100°C IDM PD @T C = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
38 27 220 38 0... |
Document |
IRLI3103 Data Sheet
PDF 149.08KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRLI3215PBF |
International Rectifier |
Advanced Process Technology | |
2 | IRLI3303 |
International Rectifier |
HEXFET Power MOSFET | |
3 | IRLI3615 |
International Rectifier |
HEXFET Power MOSFET | |
4 | IRLI3615PBF |
International Rectifier |
POWER MOSFET | |
5 | IRLI3705 |
INCHANGE |
N-Channel MOSFET | |
6 | IRLI3705N |
International Rectifier |
HEXFET Power MOSFET |