IRGSL4B60KD1 International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Datasheet. existencias, precio

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IRGSL4B60KD1

International Rectifier
IRGSL4B60KD1
IRGSL4B60KD1 IRGSL4B60KD1
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Part Number IRGSL4B60KD1
Manufacturer International Rectifier
Description PD - 95616 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Posit...
Features





• Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. TO-220 is available in PbF as Lead-Free G IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V IC = 7.6A, TC=100°C tsc > 10µs, TJ=150°C E n-channel VCE(on) typ. = 2.1V Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation. D2Pak TO-220 IRGB4B60KD1PbF IRGS4B60KD1 TO-262 IRGSL4B60KD1 Absolute Maximum Ratings P...

Document Datasheet IRGSL4B60KD1 Data Sheet
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