IRFB260NPBF |
Part Number | IRFB260NPBF |
Manufacturer | International Rectifier |
Description | PD - 95473 SMPS MOSFET IRFB260NPbF l l HEXFET® Power MOSFET Applications High frequency DC-DC converters Lead-Free VDSS 200V RDS(on) max 0.040Ω ID 56A Benefits Low Gate-to-Drain Charge to Redu... |
Features |
urface Junction-to-Ambient
Typ.
– – – 0.50 – – – Max. 0.40 – – – 62 Units °C/W Notes through are on page 8 www.irf.com 1 7/7/04 IRFB260NPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 200 – – – – – – 2.0 – – – – – – – – – – – – Typ. – – – 0.26 – – – – – – – – – – – – – – – – – – Max. Units Conditions – – – V VGS = 0V, ID = 250µ... |
Document |
IRFB260NPBF Data Sheet
PDF 169.97KB |
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