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IRF3315L |
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| Part Number | IRF3315L |
| Manufacturer | International Rectifier |
| Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe... |
| Features |
ate up to 2.0W in a typical surface mount application. The through-hole version (IRF3315L) is available for lowprofile applications.
D 2 P ak
T O -26 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
Operating Junction and Stora... |
| Document |
 IRF3315L Data Sheet
PDF 197.26KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF3315 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IRF3315 |
International Rectifier |
N-Channel Power MOSFET |
|
| 3 | IRF3315L |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IRF3315LPbF |
International Rectifier |
HEXFET Power MOSFET |
|
| 5 | IRF3315S |
International Rectifier |
Power MOSFET |
|
| 6 | IRF3315S |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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